Seamless integration technology
As shown in Fig. seamless integration technology for converging LSI and MEMS is intended to fabricate microscopic MEMS devices and wiring with a size of 10 µm to 1 mm made of metal or silicon in a layered manner. This calls for fabrication technology that will produce little damage to the LSI. Specifically, it must be a low-temperature process and must not use dry etching, which could damage LSIs, for example. Accordingly, to form MEMS structures without incurring such damage, we are developing low-temperature plating techniques as well as 10-µm-level thick-film multilevel interconnection technology using photosensitive organic resins and other advanced materials.
Concept of seamless integration technology.